2pcs 850nm 1000mW 1W Infrared 5.6mm TO18 Laser Diode Powerful IR AlGaAs Semiconductor LD

Features: .
Wavelength: 850nm (±5nm)
Output power: 1W
Threshold current: <600mA
Forward current: <1400mA
Forward voltage: 1.9V-2.2V

Details:
850nm AlGaAs quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability.

It is CW multi-mode injection semiconductor laser available on C-mount, B-mount and Q-mount. It’s suitable for application in various opto-electronic systems.

Package:
2x 850nm 1W 5.6mm Laser Diode