LSIPD-0.1S 400-1700nm 0.1mm fast InGaAs PIN photodiode photodetector

LSIPD-0.1S 400-1700nm 0.1mm fast InGaAs PIN photodiode photodetector

parameter

Model: LSIPD-0.1S
Wavelength：400-1700nm
Active diameter：0.1 ×0.1mm
Saturated Optical Power：4mW
Forward current:5mA
Reverse voltage：10V
Reverse Breakdown voltage:30V
package:Hermetic package TO46 Can or with receptacle or fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-40～+100℃

Features:
High reliability, low dark current
Active diameter 0.1mm,
-3dB Bandwidth up to 1GHz
400-1700nm wide wavelength range
Hermetic package TO46 Can or with receptacle or fiber coupling

Applications:
Optical sensor, Temperature sensing, Covert IR sensing
Medical and Chemical analysis, Spectrography
Light Detection and ranging, Industrial automatic control
Science analysis and experiment, Space light detect equipment

LSIPD-0.1S 400-1700nm 0.1mm fast InGaAs PIN photodiode photodetector