SIAPD-100 800-1700nm 100um InGaAs M=30 Avalanche photodiode photodetector

SIAPD-100 800-1700nm 100um InGaAs M=30 Avalanche photodiode photodetector

parameter

Model:SIAPD-100
Wavelength：800-1700nm
Active diameter：100um
Forward current:10mA
Power dissipation：50mW
Reverse Breakdown voltage：55V
package:Hermetic TO46 Can or Mini TO Can or with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-45～+100℃

Features:
High reliability, low dark current
Top illumination Planar APD
High Gain up to M=30
High bandwidth up to 1.5GHZ
Hermetic TO46 Can or Mini TO Can or with fiber coupling

Applications:
Ultra Weak`ptical detecting
Optical sensor, OTDR
Laser lidar, laser range finding
high resolution Optical Coherence Tomography
Science analysis and experiment

SIAPD-100 800-1700nm 100um InGaAs Avalanche photodiode photodetector