Hamamatsu S1226-5BQ silicon photodiode for precision photometry in the ultraviolet to infrared wavelength range

Hamamatsu S1226–5BQ silicon photodiode  for precision photometry in the ultraviolet to infrared wavelength range

peculiarity
High UV sensitivity: QE = 75 % (λ = 200 nm)
Suppresses near-infrared sensitivity
Low dark current
High reliability

parameter
Light-receiving surface: 2.4 × 2.4 mm
Package: Metal
Package Category: TO-5
Refrigerated: Non-cooled
Reverse voltage (max): 5 V
Spectral response range: 190 nm-1000 nm
Maximum sensitivity wavelength (typical): 720 nm
Sensitivity (typical): 0.36 A/W
Dark current (max): 5 pA
Rise time (typical): 0.5 μs
Junction capacitance (typical): 160 pF
Noise equivalent power (typical): 2.5×10-15 W/Hz1/2
Measurement conditions: Ta = 25 °C, typical, sensitivity: λ = 720 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz

Hamamatsu S1226-5BQ silicon photodiode