LSIAPD-10G 800-1700nm 10G InGaAs M=30 Avalanche photodiode photodetector

LSIAPD-10G 800-1700nm 10G InGaAs M=30 Avalanche photodiode photodetector

parameter

Model:LSIAPD-10G
Wavelength：800-1700nm
Active diameter：30um
Power dissipation:50mW
Reverse Breakdown voltage：50V
package:Hermetic TO46 Can or with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-45～+100℃

Features:

High reliability,low dark current
800-1700nm wavelength range
High Gain up to M=30
High rate up to10G bps
Hermetic TO46 Can or with fiber coupling

Applications:

Ultra Weak pulse optical detecting
Optical fiber sensor,OTDR
Laser lidar,laser range finding
high resolution Optical Coherence Tomography
Science analysis and experiment

LSIAPD-10G 10G InGaAs M=30 Avalanche Photodiode