LSIAPDT-10G 800-1700nm 10Gbps InGaAs APD with pre-amplifier V sample photodiode photodetector

LSIAPDT-10G 800-1700nm 10Gbps InGaAs APD with pre-amplifier V sample photodiode photodetector

parameter

Model:LSIAPDT-10G
Wavelength：800-1700nm
Input light power:-5dBm
Operating current of TIA:34mA
APD reverse breakdown voltage：50V
package:Hermetic TO-46 Can or with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-55～+85℃

Features:

High sensitivity at the wavelength of 1310nm/1550nm
Data rate up to 10Gbps
Low voltage power supply: 3.3V and Differential output
Built-in InGaAs APD+TIA
Hermetic TO-46 Can or with fiber coupling

Applications:

Telecommunication and Data communication
Optical sensor and OTDR
high resolution Optical Coherence Tomography
Industrial automatic control
Science analysis and experiment

LSIAPDT-10G 800-1700nm 10Gbps InGaAs APD with pre-amplifier V sample photodiode photodetector