LSIAPDT-S200 800-1700nm 200um InGaAs APD photodiode photodetector with pre-amplifier sample

LSIAPDT-S200 800-1700nm 200um InGaAs APD photodiode photodetector with pre-amplifier sample

parameter

Model:LSIAPDT-S200
Wavelength：800-1700nm
Input light power:-5dBm
Operating current of TIA:36mA
APD reverse breakdown voltage：60V
package:Hermetic TO-46 Can or with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-55～+85℃

Features:

High sensitivity at the wavelength of 1310nm/1550nm
wavelength range 800-1700nm
Low voltage power supply: 3.3V and Differential output
Built-in 200um InGaAs APD+TIA
Hermetic TO-46 Can or with fiber coupling

Applications:

Free-Space Optical communication (FSO)
laser range finding and laser lidar
Low light sensor
Analytical instruments and Medical equipment
high resolution Optical Coherence Tomography
Industrial automatic contro

LSIAPDT-S200 800-1700nm 200um InGaAs APD photodiode photodetector with pre-amplifier sample