LSIPD-0.3S 400-1700nm 0.3mm fast InGaAs PIN photodiode photodetector

LSIPD-0.3S 400-1700nm 0.3mm fast InGaAs PIN photodiode photodetector

parameter

Model: LSIPD-0.3S
Wavelength：400-1700nm
Active diameter：0.3 ×0.3mm
Saturated Optical Power：4mW
Forward current:5mA
Reverse voltage：10V
Reverse Breakdown voltage:60V
package:non-hermetic Ceramic package with epoxy resin
Soldering temperature(time):260℃
Operating temperature:-40～+80℃
Storage temperature:-40～+100℃

Features:
High reliability, low dark current
Active diameter 0.3mm,
400-1700nm wide wavelength range
Hermetic package TO46 Can or with receptacle or fiber coupling

Applications:
Optical sensor, Temperature sensing, Covert IR sensing
Medical and Chemical analysis, Spectrography
Light Detection and ranging, Industrial automatic control
Science analysis and Space light detect equipment

LSIPD-0.3S 400-1700nm 0.3mm fast InGaAs PIN photodiode photodetector