LSIPD-L0.1 800-1700nm 0.1mm InGaAs PIN Indium gallium arsenic photodiode photodetector

LSIPD-L0.1 800-1700nm 0.1mm InGaAs PIN Indium gallium arsenic photodiode photodetector

parameter

Model: LSIPD-L0.1
Wavelength：800-1700nm
Active diameter：0.1 ×0.1mm
Saturated Optical Power：5mW
Forward current:10mA
Reverse voltage：10V
Reverse Breakdown voltage:40V
package:HermeticTO46 Can
Soldering temperature(time):260℃
Operating temperature:-40～+80℃
Storage temperature:-40～+100℃

Features:
High reliability, low dark current
Top illumination Planar PIN PD
Active diameter 0.1mm
HermeticTO46 Can

Applications:
Optical sensor
Optical power meter
Industrial automatic control
Science analysis and experiment
Space light detect equipment
Response spectrum testing

LSIPD-L0.1 800-1700nm 0.1mm InGaAs PIN Indium gallium arsenic photodiode photodetector