LSIPD-UL0.3 800-1700nm 0.3mm InGaAs PIN Indium gallium arsenic photodiode photodetector

LSIPD-UL0.3 800-1700nm 0.3mm InGaAs PIN Indium gallium arsenic photodiode photodetector

parameter

Model: LSIPD-UL0.3
Wavelength：800-1700nm
Active diameter：0.3 ×0.3mm
Saturated Optical Power：5mW
Reverse voltage：10V
Reverse Breakdown voltage:30V
package:Hermetic TO46 Can or with receptacle or fiber coupling，2mm Mini TO Can
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-40～+100℃

Features:
High reliability, Ultra low dark current
800-1700nm spectral range
Active diameter 0.3mm
Hermetic TO46 Can or with receptacle or fiber coupling

Applications:
Optical sensor and Analog CATV
Optical power meter
Industrial automatic control
Medical field application
Security field application

LSIPD-UL0.3 0.3mm InGaAs PIN photodiode Photodetectors

LSIPD-UL0.3 0.3mm Mini Low Dark Current Anolog InGaAs PIN photodiode