LSIQAPD-1000 800-1700nm 1mm InGaAs M=30 quadrant Avalanche photodiode photodetector

LSIQAPD-1000 800-1700nm 1mm InGaAs M=30 quadrant Avalanche photodiode photodetector

parameter
Model: LSIQAPD-1000
Wavelength：800-1700nm
Power dissipation:100mW
Reverse breakdown voltage:60v
package:Hermetic TO5 can package
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-55～+100℃

Features:
Low noise and high reliability
800-1700nm wavelength range
element gap 100um
Fast rise time and fall time
Low crosstalk
Hermetic TO5 can package

Applications:
Beam alignment
eye-safe Laser guidance、
Laser positioning and Laser navigation
Laser range finder
Beam profiling

LSIQAPD-1000 800-1700nm 1mm InGaAs M=30 quadrant Avalanche photodiode photodetector