LSSAPD9-500 905nm Silicon 500um APD photodiode photodetector

905nm Silicon 500um APD photodiode photodetector

parameter

Model:LSSAPD9-500
Wavelength：400-1100nm
Power dissipation :1mW
Forward current: 1mA
reverse breakdown voltage：200V
package:Hermetic TO46 Can or with receptacle
or with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-45～+85℃
Storage temperature:-45～+125℃

Features:
High reliability, low dark current
Top illumination Planar APD
High Gain up to M=300
Wavelength 400-1100nm
Hermetic TO46 Can or with receptacle
or with fiber coupling

Applications:
Ultra Weak pulse optical detecting
Laser lidar, laser range finding
Optical fiber sensor, OTDR
high resolution Optical Coherence Tomography
Science analysis and experiment

LSSAPD9-500 905nm Silicon 500um Silicon avalanche photodetector 1