LSSAPDQ-500 1064nm 500um enhanced Silicon avalanche APD photodiode photodetector

LSSAPDQ-500 1064nm 500um enhanced Silicon avalanche APD photodiode photodetector

parameter

Model:LSSAPDQ-500
Wavelength：400-1100nm
reverse breakdown voltage：580V
package:Hermetic TO46 Can or with receptacle
or with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-40～+100℃

Features
High reliability,low darkcurrent
Top illumination Planar APD
High Gainup to M=400
1064nm responsivity 0.37A/W,wavelength 400-1100nm
HermeticTO46 Can or with receptacle or with fiber coupling

Applications
Ultra Weak pulse optical detecting
Laser radar,laser range finding
Optical fiber sensor,OTDR
high resolution Optical Coherence Tomography
Science analysis and experiment

LSSAPDQ-500 1064nm 500um enhanced Silicon avalanche APD photodiode photodetector