LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector

LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector

parameter

Model:LSSAPDQ-800
Wavelength：400-1100nm
Power dissipation：1mW
Forward current :1mA
reverse breakdown voltage：580V
package:Hermetic TO5 Can
Soldering temperature(time):260℃
Operating temperature:-45～+85℃
Storage temperature:-45～+125℃

Features:
High reliability, low dark current
Top illumination Planar APD
High Gain up to M=400
1064nm responsivity 0.37A/W, wavelength 400-1100nm
Hermetic TO5 Can

Applications:
Ultra Weak pulse optical detecting
Laser lidar, laser range finding
Optical fiber sensor, OTDR
high resolution Optical Coherence Tomography
Science analysis and experiment

LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector