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Home Photodetectors 400-1100nm avalanche photodetector LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector
LSSAPDQ-500 1064nm 500um enhanced Silicon avalanche APD photodiode photodetector $69.00 – $79.00
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LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector

$79.00

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Category: 400-1100nm avalanche photodetector
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Description

LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector

parameter

Model:LSSAPDQ-800
Wavelength:400-1100nm
Power dissipation:1mW
Forward current :1mA
reverse breakdown voltage:580V
package:Hermetic TO5 Can
Soldering temperature(time):260℃
Operating temperature:-45~+85℃
Storage temperature:-45~+125℃

Features:
High reliability, low dark current
Top illumination Planar APD
High Gain up to M=400
1064nm responsivity 0.37A/W, wavelength 400-1100nm
Hermetic TO5 Can

Applications:
Ultra Weak pulse optical detecting
Laser lidar, laser range finding
Optical fiber sensor, OTDR
high resolution Optical Coherence Tomography
Science analysis and experiment

LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector

LSSAPDQ-800 1064nm enhanced Silicon 800um avalanche APD photodiode photodetector

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