LXD66MQ-R, LXD66MQ-G, LXD66MQ-B silicon photodiode silicon photodetector sensors

LXD66MQ-R, LXD66MQ-G, LXD66MQ-B silicon photodiode silicon photodetector sensors

parameter
Model: LXD66MQ-R, LXD66MQ-G, LXD66MQ-B
Chip size L*W: 5.8X5.8mm
Operating temperature: -20-65°C
Storage temperature: -30-65°C

Model: LXD66MQ-R
Spectral response range: 550-750nm
Peak wavelength: 650nm
Open circuit voltage: 300mV
Short-circuit current: 4uA
Dark current:5*10^-11 A
Junction capacitance: 500PF

Model: LXD66MQ-G
Spectral response range: 450-650nm
Peak wavelength: 550nm
Open circuit voltage: 300mV
Short-circuit current: 2uA
By current:5*10^-11 A
Junction capacitance: 500PF

Model: LXD66MQ-B
Spectral response range: 350-550nm
Peak wavelength: 450nm
Open circuit voltage: 300mV
Short-circuit current: 1uA
By current:5*10^-11 A
Junction capacitance: 500PF