SIAPD-S200 800-1700nm 200um InGaAs M=30 Avalanche photodiode photodetector

SIAPD-S200 800-1700nm 200um InGaAs M=30 Avalanche photodiode photodetector

parameter

Model:SIAPD-S200
Wavelength：800-1700nm
Active diameter：200um
Power dissipation:50mW
Reverse Breakdown voltage：55V
package:Hermetic TO46 Can or Mini TO25 Can or with receptacleor with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-45～+100℃

Features:
High reliability, low dark current
Top illumination Planar APD
High Gain up to M=30
High bandwidth up to 1.25GHZ
Hermetic TO46 Can or Mini TO Can or with fiber
coupling

Applications:
Ultra Weak`ptical detecting
Optical sensor, OTDR
Laser lidar, laser range finding
high resolution Optical Coherence Tomography
Science analysis and experiment

800-1700nm LSIAPD-S200 200um InGaAs M=30 Avalanche photodiode