SIAPD-S80 800-1700nm 80um InGaAs M=30 Avalanche photodiode photodetector

SIAPD-S80 800-1700nm 80um InGaAs M=30 Avalanche photodiode photodetector

parameter

Model:SIAPD-S80
Wavelength：800-1700nm
Active diameter：80um
Reverse Breakdown voltage：55V
package:Hermetic TO46 Can or Mini TO25 Can or with receptacleor with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-45～+85℃

Features:
High reliability, low dark current
800-1700nm wavelength range
High Gain up to M=30
High bandwidth up to 1.25GHz
Hermetic TO46 Can or Mini TO25 Can or with receptacleor with fiber coupling

Applications:
Ultra Weak pulse optical detecting
Optical fiber sensor, DTS, DVS, DAS, OTDR
Laser radar, laser range finding
high resolution Optical Coherence Tomography
Science analysis and experiment

SIAPD-S80 800-1700nm 80um InGaAs M=30 Avalanche photodiode photodetector