hamamatsu S12023-02 S12023-05 S12051 S12086 S2384 Avalanche diode APD
Low bias operation, for 800 nm band
This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
Features
– Stable operation at low bias
– High-speed response
– High sensitivity and low noise
Type Near infrared type
(Low bias operation)
Photosensitive area φ0.2 mm
Package Metal
Package Category TO-18
Peak sensitivity wavelength (typ.) 800 nm
Spectral response range 400 to 1000 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 0.5 nA
Cutoff frequency (typ.) 1000 MHz
Terminal capacitance (typ.) 1 pF
Breakdown voltage (typ.) 150 V
Temperature coefficient of breakdown voltage (typ.) 0.65 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1
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