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“HAMAMATSU Silicon PIN Photodiode S6968 Wavelength 920nm 320-1060nm Diameter 10mm” has been added to your cart. View cart
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Home Hamamatsu series Hamamatsu photodiodes Hamamatsu S1337-33BR silicon photodiode 960nm
Hamamatsu S2506-02 silicon PIN photodiode for detect visible to near-infrared wavelengths
Hamamatsu S2506-02 silicon PIN photodiode for detect visible to near-infrared wavelengths $36.00
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Hamamatsu S1337-66BR silicon photodiode 960nm
Hamamatsu S1337-66BR silicon photodiode 960nm $79.00

Hamamatsu S1337-33BR silicon photodiode 960nm

$69.00

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Description

Hamamatsu S1337–33BR silicon photodiode 960nm

Detailed parameters

Light-receiving surface: 2.4 × 2.4 mm
Number of pixels: 1
Package: Ceramic
Refrigerated: Non-cooled
Reverse voltage (z–value): 5 V
Sensitivity wavelength range: 340 nm-1100 nm
Sensitivity wavelength (typical): 960 nm
Sensitivity (typical): 0.62 A/W
Dark current (z–value): 30 pA
Rise time (typical): 0.2 μs
Junction capacitance (typical): 65 pF
Noise equivalent power (typical): 6.5×10-15 W/Hz1/2
Measurement conditions: typical Ta = 25 °C, sensitivity : λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz,

 

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