Hamamatsu S1337-66BR silicon photodiode 960nm

Hamamatsu S1337-66BR silicon photodiode 960nm

Detailed parameters

Light-receiving surface: 5.8 × 5.8mm
Package: Ceramic
Refrigerated: Non-cooled
Reverse voltage (z-value): 5 V
Sensitivity wavelength range: 340 nm-1100 nm
Sensitivity wavelength (typical): 960 nm
Sensitivity (typical): 0.62 A/W
Dark current (z-value): 100 pA
Rise time (typical): 1 μs
Junction capacitance (typical): 380 pF
Noise equivalent power (typical): 1.0×10-14 W/Hz1/2
Measurement conditions: typical Ta = 25 °C, sensitivity : λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz,

Hamamatsu S1337-66BR silicon photodiode 960nm