Hamamatsu S15289-33R silicon photocell diode high sensitivity

Hamamatsu S15289-33R silicon photocell diode high sensitivity

parameter：

Light-receiving surface:  2.5 × 2.5 mm
Number of pixels:  1
Encapsulation:  Glass epoxy
Package Category:  CSP
Heat dissipation:  non-cooled
Reverse voltage (max):  10 V
Sensitivity wavelength range:  190 to 1100 nm
Maximum sensitivity wavelength (typical):  1000 nm
Sensitivity (typical):  0.54 A/W
Dark current (max):  300 pA
Rise time (typical):  30 μs
Junction capacitance (typical):  70 pF
Noise equivalent power (typical):  7.6 × 10-15 W/Hz1/2
Measurement conditions:   typical Ta = 25 °C, light sensitivity: λ = 1000 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kH, noise equivalent power: VR = 0 V, λ = λp, unless otherwise specified