Hamamatsu Silicon Photodiode APD S12023-10 S12023-10A S12053-10 High Sensitivity and Low Noise

Hamamatsu Silicon Photodiode APD S12023-10 S12023-10A S12053-10 High Sensitivity and Low Noise

Low bias voltage operation, suitable for the 800 nm band
This is a silicon APD for the 800 nm near-infrared band, capable of operating at 200 V or lower. It is suitable for applications such as free-space optical transmission (free-space optics) and optical distance measurement.
Features
• Stable operation under low bias voltage conditions
• High-speed response
• High sensitivity and low noise
Detailed Parameters
• Type: Near-infrared type (low bias voltage operation)
• Photosensitive area: φ1 mm
• Package: Metal
• Package type: TO-18
• Maximum sensitivity wavelength (typical): 800 nm
• Sensitivity wavelength range: 400 to 1000 nm
• Photosensitivity (typical): 0.5 A/W
• Dark current (maximum): 2 nA
• Cutoff frequency (typical): 600 MHz
• Junction capacitance (typical): 6 pF
• Breakdown voltage (typical): 150 V
• Breakdown voltage temperature coefficient (typical): 0.65 V/℃
• Gain rate (typical): 100
• Measurement conditions: Typical value Ta = 25°C unless otherwise specified, Photosensitivity: λ = 800 nm, M = 1
What factors affect the gain rate of Hamamatsu S12051-15?
What are the application areas of low bias voltage silicon APDs?
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