LSIPD-L0.3 800-1700nm 0.3mm InGaAs PIN Indium gallium arsenic photodiode photodetector

LSIPD-L0.3 800-1700nm 0.3mm InGaAs PIN Indium gallium arsenic photodiode photodetector

parameter

Model: LSIPD-L0.3
Wavelength：800-1700nm
Active diameter：0.3 ×0.3mm
Saturated Optical Power：5mW
Forward current:10mA
Reverse voltage：10V
Reverse Breakdown voltage:30V
package:Hermetic TO46 Can or with receptacle
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-40～+100℃

Features:
High reliability, low dark current
Top illumination Planar PIN PD
Active diameter 0.3mm
Hermetic TO46 Can or with receptacle

Applications:
Optical sensor
Optical power meter
Industrial automatic control
Science analysis and experiment
Space light detect equipment
Response spectrum testing

LSIPD-L0.3 0.3mm InGaAs PIN photodiode Photodetectors