LSIPD-LD50 3GHZ Ultra Low Dark Current Anolog InGaAs PIN photodiode photodetector

LSIPD-LD50 3GHZ Ultra Low Dark Current Anolog InGaAs PIN photodiode photodetector

parameter

Model: LSIPD-LD50
Wavelength：800-1700nm
Active diameter：φ50um
Saturated Optical Pow er：3mW
Reverse voltage：10V
Forward current :10mA
Reverse Breakdown voltage:40V
package:HermeticTO46 Can or with receptacle or fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-40～+100℃

Features:
High reliability, Ultra low dark current
800-1700nm spectral range
-3dB Bandwidth up to 3GHz
Hermetic TO46 Can or with receptacle or fiber coupling

Applications:
Ultra Weak optical signal detecting
Analog CATV, Fiber communication
Fast optical pulse testing
OTDR, Optical fiber sensor
Industrial automatic control

LSIPD-LD50 800-1700nm 170ps 3GHZ InGaAs PIN photodiode