LSIPDT-10G 800-1700nm 10Gbps InGaAs PIN photodiode photodetector with pre-amplifie

LSIPDT-10G 800-1700nm 10Gbps InGaAs PIN photodiode photodetector with pre-amplifie

parameter

Model: LSIPDT-10G
Wavelength：800-1700nm
Power Supply Voltage：0～+4V
package:Hermetic TO-46 Can or with fiber coupling
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-50～+85℃

Features:
High sensitivity at the wavelength of 1310nm/1550nm
Data rate up to 10.3Gbps
Low voltage power supply: 3.3V
Differential output
Built-in InGaAs PIN+TIA
Hermetic TO-46 Can or with fiber coupling

Applications:
Telecommunication
Data communication
Optical sensor
high resolution Optical Coherence Tomography
Industrial automatic control
Science analysis and experiment

LSIPDT-10G 800-1700nm 10Gbps InGaAs PIN photodiode photodetector with pre-amplifie