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Home Hamamatsu series Hamamatsu photodiodes original hot spot infrared silicon photodiode S12742-254 S12742-220 S12742-275
HAMAMATSU S2684-254 S2684-340 Light Detection UV Si Photodetector Silicon photodiode Water quality monitoring $199.00
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Hamamatsu S8559 silicon photoelectric diode for gamma ray detect radiation detector X-ray detect $89.00

original hot spot infrared silicon photodiode S12742-254 S12742-220 S12742-275

$169.00

64 in stock

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SKU: 3256804751200533 Category: Hamamatsu photodiodes
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Description

 

  • Type: Other
  • Origin: Mainland China
  • Model Number: S12742-254 S12742-220 S12742-275
  • Place of Origin: Japan
  • Usage: Medical instruments
  • Theory: semiconductor
  • Output: millivolt
  • Amplifier Type: Standard
  • Voltage – Supply: 5V
  • Output Type: semiconductor
  • Current – Supply: —
  • Operating Temperature: -40-85
  • Mounting Type: The plug-in
  • Resolution (Bits): 14 b
  • Features: Super stable
  • Active Area: 3.61 x 3.61 mm
  • Dark Current Max: 0.02 nA
  • Shunt Resistance: 25 Gohm
  • Value: 5V
Active Area 3.61 x 3.61 mm
Dark Current Max 0.02 nA
Shunt Resistance 25 Gohm
Value 5v

Silicon photodiode with interference filter, suitable for detection of monochromatic light (254nm)

The Windows of s12742-254 use interference filters, which are only sensitive to monochromatic light.Its spectral response width is extremely narrow, only 10nm (FWHM), can screen stray light, accurate photometer measurement.Its typical peak wavelength is 254nm, and it can also be customized to change its peak wavelength, such as 340nm, 560nm, 650nm, etc.

Product features

silicon photodiode with interference filter

monochromatic light (254nm) detection

Detailed parameters

Sensitive area 3.6 × 3.6 mm

The number of pixels is 1

Refrigeration and Non – cooled

Encapsulated Metal

Reverse voltage (maximum) 5 V

Spectral response range 252 to 256 nm

Peak sensitivity wavelength (typical value) 254 nm

Sensitivity (typical value) 0.018a /W

Dark current (maximum) 25 pA

Rise time (typical value.) 1

Junction capacitance (typical value) 500 pF

Noise equivalent power (typical value) 9.1×10-14 W/ hz1/2

Measurement conditions Typ. Ta = 25 ℃, Photosensitivity, lambda = 254 nm, Dark current: VR = 10 mV, Terminal capacitance: VR = 0 V, f = 10 kHz, whose equivalant power: VR = 0 V, lambda = lambda p, unless otherwise noted

Spectral response

254. The PNG

Overall size (unit: mm)

255. The PNG

original hot spot infrared silicon photodiode S12742-254 S12742-220 S12742-275

original hot spot infrared silicon photodiode S12742-254 S12742-220 S12742-275

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