LSIPD26-1 800-2600nm 1x1mm InGaAs PIN photodiode photodetector

LSIPD26-1 800-2600nm 1x1mm InGaAs PIN photodiode photodetector

parameter

Model:LSIPD26-1
Wavelength：800-2600nm
Active diameter：1mm ×1mm
Forward current:10mA
Saturated Optical Pow er：8mW
Reverse voltage：0.2V
Reverse Breakdown voltage：1V
package:Hermetic package TO46 Can or with receptacle or with fiber coupling.
Soldering temperature(time):260℃
Operating temperature:-40～+85℃
Storage temperature:-40～+100℃

Features:
High reliability,Low noise.
800-2600nm wide wavelength range.
Active diameter 1mm.
Hermetic package TO46 Can or with receptacle or with fiber coupling.

Applications:
Gas Analyzer
Environment measurement
Optical sensor, Temperature sensing
Covert IR sensing, Spectrography
Medical and Chemical analysis
Optical power meter, Space light detect equipment

LSIPD26-1 800-2600nm 1x1mm InGaAs PIN photodiode photodetector